Influence of charged walls and defects on DC resistivity and dielectric relaxations in Cu-Cl boracite
File(s)
Supporting information
Accepted version
Author(s)
Type
Journal Article
Abstract
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (−140 to 150 °C) and frequency (1 mHz to 10 MHz). The thermal behavior of the two observed dielectric relaxations and the DC resistivity is discussed. We propose that the relaxations can be explained by the existence of point defects, most likely local complexes created by a change of valence of Cu and accompanying oxygen vacancies. In addition, the sudden change in resistivity seen at the phase transition suggests that conductive domain walls contribute significantly to the conductivity in the ferroelectric phase.
Date Issued
2021-11-15
Date Acceptance
2021-10-30
Citation
Applied Physics Letters, 2021, 119 (20)
ISSN
0003-6951
Publisher
American Institute of Physics
Journal / Book Title
Applied Physics Letters
Volume
119
Issue
20
Copyright Statement
© 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/5.0067846
Identifier
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Subjects
DOMAIN-WALLS
Physical Sciences
Physics
Physics, Applied
Science & Technology
Publication Status
Published
Article Number
ARTN 202904
Date Publish Online
2021-11-19