Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers
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Published version
Author(s)
Type
Journal Article
Abstract
Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate the applicability of direct wafer bonding combined with plasma etching to the fabrication of complex nanophotonic systems out of InP layers. We explore and optimise the plasma etching of InP, validating existing processes and developing improved ones. We explore the use of microdisk lasing as a way to evaluate fabrication fidelity, and demonstrate that we can create complex lasing systems of interest to us: coupled disk cavities and random network lasers.
Date Issued
2023-06
Date Acceptance
2023-05-05
Citation
Micro and Nano Engineering, 2023, 19
ISSN
2590-0072
Publisher
Elsevier
Journal / Book Title
Micro and Nano Engineering
Volume
19
Copyright Statement
© 2023 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
License URL
Identifier
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:001043741900001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
Subjects
CL-2/N-2
Engineering
Engineering, Electrical & Electronic
III-V nanofabrication
INDUCTIVELY-COUPLED PLASMA
InP nanolasers
Integrated lasers
Materials Science
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Optics
PERFORMANCE
Physical Sciences
Physics
Physics, Applied
Plasma etching optimisation
Science & Technology
Science & Technology - Other Topics
Semiconductor networks
SMOOTH
Technology
Publication Status
Published
Article Number
100196
Date Publish Online
2023-05-15