Complementary Organic Logic Gates on Plastic Formed by Self-Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors
File(s)Higgins_et_al-2016-Advanced_Electronic_Materials.pdf (1.54 MB) GravureInkjet_Manuscript_Revised.pdf (4.98 MB)
Published version
Accepted version
Author(s)
Type
Journal Article
Abstract
Complementary organic field-effect transistors, inverters, NAND and NOR logic on plastic are demonstrated using a combination of nanoimprint lithography, self-alignment, gravure, and inkjet printing. Sub-micrometer channel lengths, electrode overlaps and sub-100 nm dielectrics are compared to photolithographically patterned equivalents, as are inkjet and gravure printed semiconductors.
Date Issued
2016-01-07
Date Acceptance
2015-11-05
Citation
Advanced Electronic Materials, 2016, 2 (2)
ISSN
2199-160X
Publisher
Wiley
Journal / Book Title
Advanced Electronic Materials
Volume
2
Issue
2
Copyright Statement
© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
License URL
Sponsor
Commission of the European Communities
Grant Number
247978
Subjects
Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Science & Technology - Other Topics
Materials Science
Physics
FIELD-EFFECT TRANSISTORS
THIN-FILM TRANSISTORS
INTEGRATED-CIRCUITS
METAL INK
POLYMER
AMBIPOLAR
UNIPOLAR
LAYERS
OPTIMIZATION
LITHOGRAPHY
Publication Status
Published
Article Number
1500272