Low-current transport through dopant atom-based quantum dots in a nanoscale silicon transistor
File(s)
Published version
Author(s)
Type
Journal Article
Abstract
Quantum dot (QD) single-electron transistors (SETs), using phosphorous dopant atom QDs with radii as small as ~1.2 nm, are electrically characterised down to the ~100 fA level and over a wide temperature range, from room temperature (RT = 300 K) to 8 K. The QDs are embedded within highly-scaled ~5 nm silicon nanochannels. Full ‘Coulomb diamond’, current staircase, single electron characteristics have been measured at 8 K, with low current levels
(~100 fA – 5 pA) and power (35 fW). Single electron addition energies Ea ~ 0.3 eV are among the highest reported for dopant atom transistors. Unlike
lithographically defined QDs, the ultra-small size of the QDs implies that both charging and quantisation energies are large, each ~0.1 eV or greater, and the
current cross-sectional area very small, down to a 4.5 nm2 dopant atom-based channel. Transitions in conduction from RT – 10 K are characterised using
Arrhenius plots. Current magnitudes reduce by ~106 and activation energies match Ea, as the device condenses into dopant atom transport channels.
(~100 fA – 5 pA) and power (35 fW). Single electron addition energies Ea ~ 0.3 eV are among the highest reported for dopant atom transistors. Unlike
lithographically defined QDs, the ultra-small size of the QDs implies that both charging and quantisation energies are large, each ~0.1 eV or greater, and the
current cross-sectional area very small, down to a 4.5 nm2 dopant atom-based channel. Transitions in conduction from RT – 10 K are characterised using
Arrhenius plots. Current magnitudes reduce by ~106 and activation energies match Ea, as the device condenses into dopant atom transport channels.
Date Issued
2025-11-03
Date Acceptance
2025-10-11
Citation
Applied Physics Letters, 2025, 127 (18)
ISSN
0003-6951
Publisher
American Institute of Physics
Journal / Book Title
Applied Physics Letters
Volume
127
Issue
18
Copyright Statement
© 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/4.0/).
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Publication Status
Published
Article Number
183501
Date Publish Online
2025-11-03