Interstitial light-trapping design for multi-junction solar cells
File(s)
Author(s)
Mellor, AV
Hylton, N
Maier, S
Ekins-Daukes, N
Type
Journal Article
Abstract
We present a light-trapping design capable of significantly enhancing the photon absorption in
any subcell of a multi-junction solar cell. The design works by coupling incident light into
waveguide modes in one of the subcells via a diffraction grating, and preventing these modes
from leaking into lower subcells via a low-index layer and a distributed Bragg reflector, which
together form an omnidirectional mirror. This allows the thickness of the target subcell to be
reduced without compromising photon absorption, which improves carrier collection, and
therefore photocurrent. The paper focuses on using the composite structure to improve the
radiation hardness of a InGaP/Ga(In)As/Ge space solar cell. In this context, it is shown via
simulation that the Ga(In)As middle-cell thickness can be reduced from 3500 to 700 nm,
whilst maintaining strong photon absorption, and that this leads to a significantly improved
end-of-life photocurrent in the Ga(In)As middle cell. However, the design can in general be
applied to a wide range of multi-junction solar cell types. We discuss the principles of
operation of the design, as well as possible methods of its fabrication and integration into
multi-junction solar cells.
any subcell of a multi-junction solar cell. The design works by coupling incident light into
waveguide modes in one of the subcells via a diffraction grating, and preventing these modes
from leaking into lower subcells via a low-index layer and a distributed Bragg reflector, which
together form an omnidirectional mirror. This allows the thickness of the target subcell to be
reduced without compromising photon absorption, which improves carrier collection, and
therefore photocurrent. The paper focuses on using the composite structure to improve the
radiation hardness of a InGaP/Ga(In)As/Ge space solar cell. In this context, it is shown via
simulation that the Ga(In)As middle-cell thickness can be reduced from 3500 to 700 nm,
whilst maintaining strong photon absorption, and that this leads to a significantly improved
end-of-life photocurrent in the Ga(In)As middle cell. However, the design can in general be
applied to a wide range of multi-junction solar cell types. We discuss the principles of
operation of the design, as well as possible methods of its fabrication and integration into
multi-junction solar cells.
Date Issued
2016-09-20
Date Acceptance
2016-09-06
Citation
Solar Energy Materials and Solar Cells, 2016, 159, pp.212-218
ISSN
0927-0248
Publisher
Elsevier
Start Page
212
End Page
218
Journal / Book Title
Solar Energy Materials and Solar Cells
Volume
159
Copyright Statement
© 2016, Elsevier Ltd. All rights reserved. This manscript licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
Sponsor
Commission of the European Communities
Engineering & Physical Science Research Council (EPSRC)
Grant Number
657359
EP/M025012/1
Subjects
Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Multijunction
Radiation hardness
Light trapping
Nanophotonics
NANOIMPRINT LITHOGRAPHY
SILICON
EFFICIENCY
GRATINGS
Energy
09 Engineering
03 Chemical Sciences
02 Physical Sciences
Publication Status
Published