Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
File(s)
Supporting information
Accepted version
Author(s)
Type
Journal Article
Abstract
We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h−BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
Date Issued
2018-10-15
Date Acceptance
2018-10-01
Citation
Physical review B: Condensed matter and materials physics, 2018, 98 (15)
ISSN
1098-0121
Publisher
American Physical Society
Journal / Book Title
Physical review B: Condensed matter and materials physics
Volume
98
Issue
15
Copyright Statement
©2018 American Physical Society
Sponsor
Engineering and Physical Sciences Research Council
Grant Number
EP/L015579/1
Subjects
Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
SCANNING-TUNNELING-MICROSCOPY
HEXAGONAL BORON-NITRIDE
EPITAXIAL GRAPHENE
ATOMIC-HYDROGEN
HIGH-QUALITY
SPECTROSCOPY
DIMERS
PROBE
DFT
Publication Status
Published
Article Number
ARTN 155436
Date Publish Online
2018-10-24