Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Kamiya, T; Nakahata, K; Tan, Y T; Durrani, Z; Shimizu, I

doi:http://dx.doi.org/10.1063/1.1368164

File(s)

Durrani_ Kamiya et al, Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor.pdf (366.58 KB)

Published version

Author(s)

Kamiya, T

Nakahata, K

Tan, Y T

Durrani, Z

Shimizu, I

Type

Journal Article

Date Issued

2001

Citation

Journal of Applied Physics, 2001, 11, 89, pp.6265-6271

URI

http://hdl.handle.net/10044/1/13748

DOI

http://dx.doi.org/10.1063/1.1368164

ISSN

0021-8979

Start Page

6265

End Page

6271

Journal / Book Title

Journal of Applied Physics

Volume

89

Copyright Statement

License URL

http://www.rioxx.net/licenses/all-rights-reserved

Edition

11