Electronic band structure of two-dimensional WS2/Graphene van der Waals heterostructures
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Accepted version
Supporting information
Author(s)
Type
Journal Article
Abstract
Combining single
-
layer
two
-
dimensional semiconducting transition metal dichalcogenides (TMDs)
with graphene
layer in van der Waals heterostructures
offers an intriguing means of controlling the electronic properties through
these
heterostructures
. Her
e
, we report
the
electronic
and structural
properties of transferred single layer WS
2
on
epitaxial graphene using
micro
-
Raman spectroscopy,
a
ngle
-
resolv
ed photoemission spectroscopy measurements
(ARPES)
and Density Functional Theory
(DFT)
calculations
.
The results
show good electronic properties as well as
well
-
defined band arising from the
strong splitting of the single layer WS
2
valence band at K points
, with a
maximum splitting of 0.44 eV.
By comparing our
DFT
results with local and hybrid functionals, we find the
top
valence band of the
experimental
heterostructure
is close
to the calculations for
suspended
single layer
WS
2
.
.
Our
results provide an i
mportant reference for future studies of electronic properties of WS
2
and
its
applications in
valleytronic devices.
-
layer
two
-
dimensional semiconducting transition metal dichalcogenides (TMDs)
with graphene
layer in van der Waals heterostructures
offers an intriguing means of controlling the electronic properties through
these
heterostructures
. Her
e
, we report
the
electronic
and structural
properties of transferred single layer WS
2
on
epitaxial graphene using
micro
-
Raman spectroscopy,
a
ngle
-
resolv
ed photoemission spectroscopy measurements
(ARPES)
and Density Functional Theory
(DFT)
calculations
.
The results
show good electronic properties as well as
well
-
defined band arising from the
strong splitting of the single layer WS
2
valence band at K points
, with a
maximum splitting of 0.44 eV.
By comparing our
DFT
results with local and hybrid functionals, we find the
top
valence band of the
experimental
heterostructure
is close
to the calculations for
suspended
single layer
WS
2
.
.
Our
results provide an i
mportant reference for future studies of electronic properties of WS
2
and
its
applications in
valleytronic devices.
Date Issued
2018-04-19
Date Acceptance
2018-03-13
Citation
Physical Review B, 2018, 97, pp.155421 – 1-155421 – 8
ISSN
2469-9950
Publisher
American Physical Society
Start Page
155421 – 1
End Page
155421 – 8
Journal / Book Title
Physical Review B
Volume
97
Copyright Statement
©2018 American Physical Society
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Identifier
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.155421
Grant Number
EP/L003481/1
EP/M022250/1
Publication Status
Published
Date Publish Online
2018-04-19