Room temperature Szilard cycle and entropy exchange at the Landauer limit in a dopant atom double quantum dot silicon transistor
File(s)
Published version
Author(s)
Durrani, Zahid
Abualnaja, Faris
Jones, Mervyn
Type
Journal Article
Abstract
Room-temperature (RT) thermodynamics of a dopant-atom double quantum dot (DQD) silicon transistor are extracted using measurements of the dual gate charge stability diagram. Current traces corresponding to electron exchange in the Szilard one-electron gas ‘Maxwell Demon’ thermodynamic cycle are determined. Theoretical analysis, based on energy state shifts within the generalised DQD charge stability diagram, is used to map the Szilard cycle entropy exchange to the stability diagram. The restriction on the inter-QD coupling energy Em > kT, necessary to observe DQD operation, is inherently seen to satisfy the Landauer limit, kTln2, for the minimum energy consumption per cycle for 1 bit. Associated entropy flows are extracted and simulated using single-electron Monte Carlo equivalent circuit simulations, from 4.2 to 290 K. An entropy valley, tending to the Szilard limit minimum of −kln2,
occurs at degeneracy between neighbouring electron states, with traces persisting to RT. Changes in gate cycle trajectory, device capacitance, and temperature are characterised to establish conditions for RT operation.
occurs at degeneracy between neighbouring electron states, with traces persisting to RT. Changes in gate cycle trajectory, device capacitance, and temperature are characterised to establish conditions for RT operation.
Date Issued
2022-07-14
Date Acceptance
2022-04-12
Citation
Journal of Physics D: Applied Physics, 2022, 55 (28)
ISSN
0022-3727
Publisher
IOP Publishing
Journal / Book Title
Journal of Physics D: Applied Physics
Volume
55
Issue
28
Copyright Statement
© 2022 The Author(s). Published by IOP Publishing Ltd Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any fur ther distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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Subjects
double quantum dots
entropy
INFORMATION
nanoelectronic devices
nanoscale thermodynamics
Physical Sciences
Physics
Physics, Applied
quantum dot transistors
Science & Technology
SINGLE-ELECTRON TRANSISTOR
THERMODYNAMICS
TRANSPORT
Publication Status
Published
Article Number
285304
Date Publish Online
2022-04-27