Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm(2)/Vs
File(s)
Published version
Author(s)
Type
Journal Article
Abstract
We report the development of hybrid complementary inverters based on p-channel organic and
n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 C. For the
organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-
b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type
dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the nchannel
TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced
carrier mobilities up to 10 cm2
/Vs. Hybrid complementary inverters based on these devices show high
signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures
employed and the achieved level of device performance highlight the tremendous potential of the technology
for application in the emerging sector of large-area microelectronics.
n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 C. For the
organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-
b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type
dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the nchannel
TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced
carrier mobilities up to 10 cm2
/Vs. Hybrid complementary inverters based on these devices show high
signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures
employed and the achieved level of device performance highlight the tremendous potential of the technology
for application in the emerging sector of large-area microelectronics.
Date Issued
2016-12-28
Date Acceptance
2016-12-12
Citation
Applied Physics Letters, 2016, 109 (26)
ISSN
1077-3118
Publisher
AIP Publishing
Journal / Book Title
Applied Physics Letters
Volume
109
Issue
26
Copyright Statement
© 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 109, 263301 (2016); doi: 10.1063/1.4972988 and may be found at https://dx.doi.org/10.1063/1.4972988
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000392834000032&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Physical Sciences
Physics, Applied
Physics
THIN-FILM TRANSISTORS
FIELD-EFFECT TRANSISTORS
LOW-TEMPERATURE
HIGH-PERFORMANCE
FLEXIBLE ELECTRONICS
LOW-VOLTAGE
V-1 S(-1)
SEMICONDUCTORS
FABRICATION
TRANSPORT
Applied Physics
09 Engineering
02 Physical Sciences
Publication Status
Published
Article Number
ARTN 263301