Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres
File(s)
Accepted version
Author(s)
Regoutz, Anna
Pobegen, Gregor
Aichinger, Thomas
Type
Journal Article
Abstract
SiC has immense potential as the semiconductor for future metal–oxide–semiconductor (MOS) devices. One of the greatest advantages and disadvantages of SiC is its native oxide, SiO2. The ability to use established SiO2 processes to create a reliable dielectric directly on the SiC semiconductor is very desirable. However, the SiC/SiO2 interface exhibits high defect densities leading to detrimental effects on device performance. A variety of treatment processes, often in N-containing atmospheres, has been shown to compensate defects and increase device performance. However, information on the local chemistry at the interface after such processes is scarce, which limits the understanding of the interface and consequently the targeted improvement of device characteristics. The present work uses X-ray photoelectron spectroscopy (XPS) to systematically study the elemental distributions and chemical environments across the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres. In particular the use of a NO/NH3 combinatorial process is of great interest as it influences the defect chemistry on both the oxide and carbide side of the interface. We are able to identify N–C–Si environments as the dominant defect states at the interface. The XPS results are correlated with electrical and reflective index measurements, providing new, detailed insights into the relationship between interface chemistry and device behaviour.
Date Issued
2018-11-28
Date Acceptance
2018-10-08
Citation
Journal of Materials Chemistry C, 2018, 6 (44), pp.12079-12085
ISSN
2050-7526
Publisher
Royal Society of Chemistry
Start Page
12079
End Page
12085
Journal / Book Title
Journal of Materials Chemistry C
Volume
6
Issue
44
Copyright Statement
© 2018 The Royal Society of Chemistry.
Sponsor
Imperial College London
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000450436300025&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
GATE OXIDES
Publication Status
Published
Date Publish Online
2018-10-08