Fabrication of epitaxial W-Doped VO2 nanostructured films for terahertz modulation using the solvothermal process
File(s)
Supporting information
Accepted version
Author(s)
Type
Journal Article
Abstract
We report a feasible and high-throughput method for high-quality W-doped VO2 nanostructured epitaxial films on r-sapphire substrate fabrication. Single-phase, smooth vanadium dioxide thin films with uniform distribution of tungsten (up to 2.3%) are formed using the solvothermal process from ethylene glycol/water V4+ and W6+ solutions. Compositional analysis by X-ray photoelectron and energy-dispersive X-ray spectroscopy (XPS and EDX, respectively); structural analysis (X-ray diffraction, Raman spectroscopy, selected area electron diffraction (SAED)); and detailed analysis of the surface morphology and substrate–film interface using scanning electron microscopy, atomic force microscopy, and high-resolution transmission electron microscopy (SEM, AFM, HRTEM, respectively) confirm the formation of nanoscale (50–60 nm) epitaxial W:VO2 (M1) on r-sapphire with epitaxial relationships (100)VO2∥(101̅2)Al2O3 and [010]VO2∥[011̅0]Al2O3. The nanostructured films demonstrate excellent terahertz (THz) transmission properties: a phase transition temperature of 31 °C, a huge THz modulation depth of over 60%, and broad bandwidth (≥2 THz) operation. Hence, they can be efficiently used as active material for tunable THz manipulation devices.
Date Issued
2021-10-22
Date Acceptance
2021-09-23
Citation
ACS Applied Nano Materials, 2021, 4 (10), pp.10592-10600
ISSN
2574-0970
Publisher
American Chemical Society (ACS)
Start Page
10592
End Page
10600
Journal / Book Title
ACS Applied Nano Materials
Volume
4
Issue
10
Copyright Statement
© 2021 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Appl. Nano Mater., after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsanm.1c02081
Identifier
https://pubs.acs.org/doi/10.1021/acsanm.1c02081
Publication Status
Published
Date Publish Online
2021-10-08