Defects at the interfaces of perovskite (PVK) thin films are the main factors responsible for instability and low photoelectric conversion efficiency (PCE) of PVK solar cells (PSCs). Here, a SnO2-MXene composite electron transport layer (ETL) is used in PSCs to improve interfacial contact and passivate defects at the SnO2/perovskite interface. The introduced MXene regulates SnO2 dispersion and induces a vertical growth of PVK. The lattice matching of MXene and perovskite suppresses the concentration of interfacial stress, thereby obtaining a perovskite film with low defects. Compared with SnO2-based device, the PCE of SnO2-MXene-based device is improved by 15 % and its short-circuit current is up to 25.07 mA cm−2. Furthermore, unencapsulated device maintained about 90 % of its initial efficiency even after 500 h of storage at 30–40 % relative humidity in ambient air. The composite ETL strategy provides a route to engineer interfacial passivation between metal halide perovskites and ETLs.