Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp
File(s)J. Mater. Chem. C - DOI_10.1039-c7tc03721j.pdf (1.48 MB)
Accepted version
Author(s)
Type
Journal Article
Abstract
We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer's surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.
Date Issued
2017-11-01
Online Publication Date
2018-11-01T07:00:12Z
Date Acceptance
2017-10-16
ISSN
2050-7526
Publisher
Royal Society of Chemistry
Start Page
11724
End Page
11732
Journal / Book Title
Journal of Materials Chemistry C
Volume
5
Issue
45
Copyright Statement
© The Royal Society of Chemistry 2017
Source Database
web-of-science
Sponsor
Commission of the European Communities
Grant Number
658563
Subjects
Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
FIELD-EFFECT TRANSISTORS
PULSED WHITE-LIGHT
HIGH-PERFORMANCE
ZNO
DIELECTRICS
IN2O3
Publication Status
Published