High-mobility and high-optical quality atomically thin WS2
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Published version
Author(s)
Type
Journal Article
Abstract
The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used direct sulfidization of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.
Date Issued
2017-11-02
Online Publication Date
2017-11-02
Date Acceptance
2017-10-19
ISSN
2045-2322
Publisher
Nature Publishing Group
Start Page
1
End Page
10
Journal / Book Title
Scientific Reports
Volume
7
Issue
1
Copyright Statement
This article is licensed under a Creative Commons Attribution 4.0 International
License, which permits use, sharing, adaptation, distribution and reproduction in any medium or
format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative
Commons license, and indicate if changes were made. Te images or other third party material in this
article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the
material. If material is not included in the article’s Creative Commons license and your intended use is not permitted
by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the
copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
© The Author(s) 2017
License, which permits use, sharing, adaptation, distribution and reproduction in any medium or
format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative
Commons license, and indicate if changes were made. Te images or other third party material in this
article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the
material. If material is not included in the article’s Creative Commons license and your intended use is not permitted
by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the
copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
© The Author(s) 2017
Source Database
manual-entry
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Imperial College London
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Identifier
https://www.nature.com/articles/s41598-017-14928-2
Grant Number
EP/L003481/1
EP/K033840/1
EP/K016792/1
EP/K01658X/1
EP/M022250/1
Subjects
Science & Technology
Multidisciplinary Sciences
Science & Technology - Other Topics
TRANSITION-METAL DICHALCOGENIDES
CHEMICAL-VAPOR-DEPOSITION
MONOLAYER WS2
SINGLE-LAYER
ELECTRONIC-STRUCTURE
VALLEY POLARIZATION
GROWTH
FILMS
MOS2
PHOTOLUMINESCENCE
cond-mat.mtrl-sci
cond-mat.mtrl-sci
Publication Status
Published
Article Number
14911
Date Publish Online
2017-11-02