Impact of oxygen on gallium doped germanium
File(s)
Published version
Author(s)
Kuganathan, Navaratnarajah
Bracht, H
Davazoglou, K
Kipke, F
Chroneos, Alexander
Type
Journal Article
Abstract
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for nanoelectronic applications. Understanding dopant–defect interactions is important to form well-defined doped regions for devices. Gallium (Ga) is a key p-type dopant in Ge. In the present density functional theory study, we concentrate on the structures and electronic structures of Ga doped Ge in the presence of Ge vacancies and oxygen. We provide information on the defect structures and charge transfer between the doped Ga atom and the nearest neighbor Ge atom. The calculations show that the presence of Ga on the Ge site facilitates the formation of nearest neighbor Ge vacancies at 0.75 eV. The formation of interstitial oxygen is endoergic with the formation of −2 charge in both bulk Ge and Ga substituted Ge although the substitution of Ga has slightly less impact on the oxygen interstitial formation.
Date Issued
2021-06-01
Date Acceptance
2021-05-31
Citation
AIP Advances, 2021, 11 (6)
ISSN
2158-3226
Publisher
American Institute of Physics
Journal / Book Title
AIP Advances
Volume
11
Issue
6
Copyright Statement
© 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
License URL
Subjects
0205 Optical Physics
0206 Quantum Physics
0906 Electrical and Electronic Engineering
Publication Status
Published
Article Number
ARTN 065122
Date Publish Online
2021-06-11