Investigation of carrier recombination dynamics of InGaP/InGaAsP multiple quantum wells for solar cells via photoluminescence
File(s)1611.01923.pdf (2.61 MB)
Accepted version
Author(s)
Type
Journal Article
Abstract
The carrier recombination dynamics of InGaP/InGaAsP quantum wells is reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well (MQW) heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have very low nonradiative recombination rate and high radiative efficiency compared with the control InGaP sample. Along with the analyses of PL emission spectrum and external quantum efficiencies, it suggests that this is due to small confinement potentials in the conduction band but high confinement potentials in the valence band. These results explain several features found in InGaP/InGaAsP MQW solar cells previously.
Date Issued
2017-02-15
Date Acceptance
2017-01-24
ISSN
2156-3381
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Start Page
817
End Page
821
Journal / Book Title
IEEE Journal of Photovoltaics
Volume
7
Issue
3
Copyright Statement
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Sponsor
Quantasol Ltd - HRF
Commission of the European Communities
Grant Number
nil
283798
Subjects
Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
III-V semiconductor materials
photoluminescence
quantum wells
GA0.5IN0.5P
DIFFUSION
LIFETIMES
Publication Status
Published