Inhomogeneous gain effects in quantum dot lasers
File(s)Inhomogeneous gain effects in quantum dot lasers.pdf (113.96 KB)
Accepted version
Author(s)
Spencer, P
Clarke, E
Howe, P
Murray, R
Type
Journal Article
Abstract
A comparison of optical and electrical derivative spectroscopy on a dual-state lasing InAs/GaAs quantum dot bilayer device is presented. The junction voltage cannot be described by a quasi-Fermi level separation and only partial clamping above the laser threshold was observed, demonstrating inhomogeneous gain. There is also competition between transverse optical modes which must be taken into account for a full understanding of dual-state lasing
Date Issued
2007-05-21
Date Acceptance
2007-05-10
Citation
Electronics Letters, 2007, 43 (10), pp.574-575
ISSN
0013-5194
Publisher
IEEE
Start Page
574
End Page
575
Journal / Book Title
Electronics Letters
Volume
43
Issue
10
Copyright Statement
© 2007 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (E
Engineering & Physical Science Research Council (EPSRC)
Ingenia Holdings Limited
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Grant Number
GR/S05762/01
GR/R55078/01
EP/C511972/1
DVP/EJV
EP/F033427/1
EP/H000488/1
Subjects
Electrical & Electronic Engineering
0906 Electrical And Electronic Engineering
0801 Artificial Intelligence And Image Processing
1005 Communications Technologies
Publication Status
Published