Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells
File(s)
Accepted version
Author(s)
Type
Journal Article
Date Issued
2015-01-20
Date Acceptance
2014-12-01
Citation
Progress in Photovoltaics, 2015, 24 (4), pp.533-542
ISSN
1099-159X
Publisher
Wiley
Start Page
533
End Page
542
Journal / Book Title
Progress in Photovoltaics
Volume
24
Issue
4
Copyright Statement
This is the peer reviewed version of the following article: Toprasertpong, K., Fujii, H., Thomas, T., Führer, M., Alonso-Álvarez, D., Farrell, D. J., Watanabe, K., Okada, Y., Ekins-Daukes, N. J., Sugiyama, M., and Nakano, Y. (2016) Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells. Prog. Photovolt: Res. Appl., 24: 533–542, which has been published in final form at https://dx.doi.org/10.1002/pip.2585. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
Sponsor
Commission of the European Communities
Commission of the European Communities
Grant Number
283798
302088
Subjects
Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
quantum well
strain compensation
lattice match
multijunction subcell
bandgap engineering
III-V semiconductors
CARRIER COLLECTION EFFICIENCY
DETAILED BALANCE LIMIT
GAAS
STRAIN
GROWTH
SEMICONDUCTORS
SEGREGATION
TRANSPORT
EPITAXY
VOLTAGE
Applied Physics
0204 Condensed Matter Physics
0912 Materials Engineering
0999 Other Engineering
Publication Status
Published