Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.
File(s)
Accepted version
Author(s)
Labram, JG
Lin, YH
Anthopoulos, TD
Type
Journal Article
Abstract
In the last decade, metal oxides have emerged as a fascinating class of electronic material, exhibiting a wide range of unique and technologically relevant characteristics. For example, thin-film transistors formed from amorphous or polycrystalline metal oxide semiconductors offer the promise of low-cost, large-area, and flexible electronics, exhibiting performances comparable to or in excess of incumbent silicon-based technologies. Atomically flat interfaces between otherwise insulating or semiconducting complex oxides, are also found to be highly conducting, displaying 2-dimensional (2D) charge transport properties, strong correlations, and even superconductivity. Field-effect devices employing such carefully engineered interfaces are hoped to one day compete with traditional group IV or III-V semiconductors for use in the next-generation of high-performance electronics. In this Concept article we provide an overview of the different metal oxide transistor technologies and potential future research directions. In particular, we look at the recent reports of multilayer oxide thin-film transistors and the possibility of 2D electron transport in these disordered/polycrystalline systems and discuss the potential of the technology for applications in large-area electronics.
Date Issued
2015-09-09
Date Acceptance
2015-06-16
Citation
Small, 2015, 11 (41), pp.5472-5482
ISSN
1613-6810
Publisher
Wiley-VCH Verlag
Start Page
5472
End Page
5482
Journal / Book Title
Small
Volume
11
Issue
41
Copyright Statement
This is the peer reviewed version of the following article: Labram, J. G., Lin, Y.-H. and Anthopoulos, T. D. (2015), Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies. Small, 11: 5472–5482. which has been published in final form at https://dx.doi.org/10.1002/smll.201501350. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
Subjects
energy quantization
heterostructures
metal oxides
semiconductors
solution processing
transistors
two-dimensional transport
Publication Status
Published