Pyroelectric and photovoltaic properties of Nb doped PZT thin films
File(s)
Published version
Author(s)
Type
Journal Article
Abstract
Nb-doped lead zirconate titanate (PZT) films with up to 12 at. % of Nb were co-sputtered from oxide PZT and metallic Nb targets at a substrate temperature of 600 °C. Up to 4 at. % of Nb was doped into the perovskite structure with the formation of B-site cation vacancies for charge compensation. The preferential (111) PZT orientation decreased with Nb-doping within the solid solution region. The ferroelectric response of the films was affected by the large values of the internal field present in the samples (e.g., −84.3 kV cm−1 in 12 at. % Nd doped films). As-deposited unpoled films showed large values of the pyroelectric coefficient due to self-poling. The pyroelectric coefficient increased with Nb-doping and showed a complex dependence on the applied bias. The photovoltaic effect was observed in the films. The value of the photocurrent increased with the A/B ratio. The combined photovoltaic–pyroelectric effect increased the values of the measured current by up to 47% upon light illumination.
Date Issued
2021-04-01
Date Acceptance
2021-03-22
Citation
APL Materials, 2021, 9 (4)
ISSN
2166-532X
Publisher
AIP Publishing LLC
Journal / Book Title
APL Materials
Volume
9
Issue
4
Copyright Statement
© 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
License URL
Sponsor
Innovate UK
Grant Number
103525
Subjects
0906 Electrical and Electronic Engineering
0912 Materials Engineering
0913 Mechanical Engineering
Publication Status
Published
Article Number
ARTN 041108
Date Publish Online
2021-04-12