Seebeck coefficient of one electron
File(s)Durrani_Seebeck coefficient of one electron.pdf (741.92 KB)
Published version
Author(s)
Durrani, Zahid AK
Type
Journal Article
Abstract
The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects.
Date Issued
2014-03-07
Date Acceptance
2014-02-01
Citation
Journal of Applied Physics, 2014, 115 (9)
ISSN
0021-8979
Publisher
American Institute of Physics
Journal / Book Title
Journal of Applied Physics
Volume
115
Issue
9
Copyright Statement
© 2014 AIP Publishing LLC.
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000332730700056&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Physical Sciences
Physics, Applied
Physics
QUANTUM-DOT
THERMOELECTRIC-MATERIALS
TUNNEL-JUNCTIONS
THERMOPOWER
SILICON
DEVICES
OSCILLATIONS
MEMORY
Publication Status
Published
Article Number
094508