Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers
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Abstract
Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate the applicability of direct wafer bonding combined with plasma etching to the fabrication of complex nanophotonic systems out of InP layers. We explore and optimise the plasma etching of InP, validating existing processes and developing improved ones. We explore the use of microdisk lasing as a way to evaluate fabrication fidelity, and demonstrate that we can create complex lasing systems of interest to us: coupled disk cavities and random network lasers.
Date Issued
2023-07-17
Citation
2023
License URL
Is Referenced By
10.1016/j.mne.2023.100196
Subjects
III-V nanofabrication
Plasma etching optimisation
Integrated lasers
InP nanolasers
Semiconductor networks