Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid
File(s)
Accepted version
Author(s)
Qiao, L
Shougee, A
Albrecht, T
Fobelets, K
Type
Journal Article
Abstract
Improved performance of Si nanowire arrays for capacitor electrodes in ionic liquid [Bmim][NTf2], is obtained by spin-on-doping the nanowires followed by hot, concentrated nitric acid oxidation. n- and p-type Si nanowire arrays are fabricated via a 2-step metal-assisted chemical etch process to increase the effective surface area. Spin-on-doping increases the doping density of the nanowires, enhancing the current by a factor of more than 3. The well-controlled HNO3 oxidation defines a thin, dense oxide layer on the Si nanowires increasing chemical stability, both expanding the electrochemical window and increasing the current further by a factor >2. Specific capacitances of 238 μF cm−2 (∼0.4 F g−1, 159 mF cm−3) and 404 μF cm−2 (∼0.7 F g−1, 269 mF cm−3) are obtained for n- and p-type Si nanowire arrays, respectively.
Date Issued
2016-05-13
Date Acceptance
2016-05-12
Citation
Electrochimica Acta, 2016, 210, pp.32-37
ISSN
0013-4686
Publisher
Elsevier
Start Page
32
End Page
37
Journal / Book Title
Electrochimica Acta
Volume
210
Copyright Statement
© 2016 Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
Subjects
Energy
03 Chemical Sciences
09 Engineering
02 Physical Sciences
Publication Status
Published