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Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer
File(s)
Author(s)
Ullah, M
Lin, Y-H
Muhieddine, K
Lo, S-C
Anthopoulos, TD
Type
Journal Article
Abstract
The performance of solution and low-temperature processed hybrid light-emitting field-effect transistors is enahnced by a new development strategy. The manipulation of the work function at the oxide/polymer interface is presented for achieving high all-round performance in these devices.
Date Issued
2015-11-19
Date Acceptance
2015-10-15
Citation
Advanced Optical Materials, 2015, 4 (2), pp.231-237
URI
DOI
ISSN
2195-1071
Publisher
Wiley
Start Page
231
End Page
237
Journal / Book Title
Advanced Optical Materials
Volume
4
Issue
2
Copyright Statement
This is the peer reviewed version of the following article: Ullah, M., Lin, Y.-H., Muhieddine, K., Lo, S.-C., Anthopoulos, T. D. and Namdas, E. B. (2016), Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer. Advanced Optical Materials, 4: 231–237, which has been published in final form at https://dx.doi.org/10.1002/adom.201500474.  This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
Sponsor
Commission of the European Communities
Grant Number
280221
Subjects
Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Optics
Materials Science
FIELD-EFFECT TRANSISTORS
EFFICIENT
AMBIPOLAR
HETEROSTRUCTURE
SEMICONDUCTOR
BRIGHTNESS
LAYERS
ROUTE
Publication Status
Published