Comparative study of annealed and high temperature grown ITO and AZO films for solar energy applications
File(s) ITO-AZO paper_v3_rev1.pdf (1.18 MB)
Accepted version
Author(s)
Alonso Alvarez, D
Ferre Llin, L
Mellor, A
Paul, DJ
Ekins-Daukes, NJ
Type
Journal Article
Abstract
We present the optical and electrical properties of ITO and AZO films fabricated directly on silicon substrates under several growth and annealing temperatures, as well as their potential performance when used as low emissivity coatings in hybrid photovoltaic-thermal systems. We use broadband spectroscopic ellipsometry measurements (from 300 nm to 20 μm) to obtain a consistent model for the permittivity of each of the films. The best performance is found using the properties of the ITO film grown at 250 °C, with a state of the art resistivity of 0.2 mΩ-cm and an optimized thickness of 75 nm which leads to an estimated 50% increase in the extracted power compared to a standard diffused silicon solar cell. The Hall mobility and resistivity measurements of all the films are also provided, complementing and supporting the observed optical properties.
Date Issued
2017-06-19
Date Acceptance
2017-06-12
Citation
MRS Advances, 2017, 2 (53), pp.3117-3122
ISSN
2059-8521
Publisher
Cambridge University Press
Start Page
3117
End Page
3122
Journal / Book Title
MRS Advances
Volume
2
Issue
53
Copyright Statement
© Materials Research Society 2017. This paper has been accepted for publication and will appear in a revised form, subsequent to peer-review and/or editorial input by Cambridge University Press.
Sponsor
Commission of the European Communities
Grant Number
657359
Subjects
Science & Technology
Technology
Materials Science, Multidisciplinary
Materials Science
CELLS
Publication Status
Published
