GaAsBi: an alternative to InGaAs based multiple quantum well photovoltaics
File(s)
Accepted version
Author(s)
Type
Conference Paper
Abstract
A series of GaAsBi/GaAs multiple quantum well p-i-n diodes are characterized using IV, photocurrent and illuminated IV measurements. The results are compared to an InGaAs/GaAsP multiple quantum well control device of a design that has demonstrated excellent performance in triple junction photovoltaics. The extended absorption of the GaAsBi/GaAs devices, compared to that of the InGaAs/GaAsP device, suggests that GaAsBi/GaAs could present a viable alternative to InGaAs/GaAsP for quad junction photovoltaics.
Date Issued
2018-05-25
Date Acceptance
2016-06-05
Citation
2016 IEEE 44th Photovoltaic Specialist Conference, PVSC 2016, 2018, 2016, pp.1135-1137
ISBN
9781509027248
Publisher
IEEE
Start Page
1135
End Page
1137
Journal / Book Title
2016 IEEE 44th Photovoltaic Specialist Conference, PVSC 2016
Volume
2016
Copyright Statement
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Source
Photovoltaic Specialists Conference (PVSC)
Publication Status
Published
Start Date
2016-06-05
Finish Date
2016-06-10
Coverage Spatial
Portland, OR, USA
Date Publish Online
2016-11-21