This paper presents experimental findings of a new passive memristive memory structure called ICIR, which involves the series connection of one capacitor and one ReRAM. The ICIR configuration, illustrated in Fig. 1, shows great potential as a memory structure due to its high density, reduced power consumption, improved switching speed, and, notably, the monotonic relationship between the charges on the capacitor and the memristance. In this paper, we have implemented a ICIR structure utilizing a discrete Knowm memristor with Self-Directed Channel (SDC) Memristor material stack. Our experiment involved performing forming, writing, and reading operations. The forming and writing operation were done by applying pulses with a width lower than 15RmemC. This approach was adopted considering the high-pass filter characteristics inherent in the ICIR configuration. The results demonstrate that the ICIR structure effectively stores 1-bit of information by dividing the memristor’s resistance (memristance) into two states: 15.17 KΩ (bit 1) and 282 KΩ (bit 0). The memristance reading operation in this experiment was based on measuring the time required for the capacitor to charge (τ=RmemC).