Correlation of p-doping in CVD Graphene with Substrate Surface Charges
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Author(s)
Type
Journal Article
Abstract
Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σmin) occurring at gate voltage Vg = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O2 plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of Vg at σmin and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements.
Date Issued
2016-03-09
Date Acceptance
2016-02-23
Citation
Scientific Reports, 2016, 6
ISSN
2045-2322
Publisher
Nature Publishing Group
Journal / Book Title
Scientific Reports
Volume
6
Copyright Statement
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license, visit http://creativecommons.org/licenses/by/4.0/
or other third party material in this article are included in the article’s Creative Commons license,
unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license,
users will need to obtain permission from the license holder to reproduce the material. To view a copy of this
license, visit http://creativecommons.org/licenses/by/4.0/
License URL
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Grant Number
EP/K016407/1
Publication Status
Published
Article Number
22858