Experimental and numerical simulation study of a semiconductor opening switch
File(s)
Accepted version
Author(s)
Type
Journal Article
Abstract
This article examines the nanosecond interruption of high current in semiconductor opening switch (SOS) diodes, with the goal of bridging the gap between experimental results and numerical simulations. The experimental results of SOS diodes (0.25 cm2, 0.9 kV) operating as a nanosecond interrupter are presented in a wide range of cut-off current density from 300 A/cm2 to 5 kA/cm2 to analyze the two modes of operation, i.e., drift step recovery diode (DSRD) and SOS. In addition, the numerical simulations of the SOS diode are conducted to investigate the dynamics of the SOS diode in the DSRD and the SOS modes using the Synopsys TCAD. A mixed-mode device with a circuit simulator is utilized to simulate the SOS effect and the dynamic processes occurring during the current cut-off stage. Finally, the experimental and numerical simulation results of the SOS current and load voltage are compared indicating: 1) the accuracy of the TCAD model in the commercially available software, and 2) the possibility of operating the SOS diode in a DSRD mode.
Date Issued
2025-07-01
Date Acceptance
2025-05-14
Citation
IEEE Transactions on Plasma Science, 2025, 53 (7), pp.1583-1591
ISSN
0093-3813
Publisher
Institute of Electrical and Electronics Engineers
Start Page
1583
End Page
1591
Journal / Book Title
IEEE Transactions on Plasma Science
Volume
53
Issue
7
Copyright Statement
Copyright © 2025 IEEE. This is the author’s accepted manuscript made available under a CC-BY licence in accordance with Imperial’s Research Publications Open Access policy (www.imperial.ac.uk/oa-policy)
License URL
Publication Status
Published
Date Publish Online
2025-06-06