A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element

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Durrani_Irvine et al, A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element.pdf (719.03 KB)

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Author(s)

Irvine, AC

Durrani, ZAK

Ahmed, H

Type

Journal Article

Date Issued

2000

Citation

Journal of Applied Physics, 2000, 87 (12), pp.8594-8603

URI

http://hdl.handle.net/10044/1/13750

DOI

https://www.dx.doi.org/10.1063/1.373584

ISSN

0021-8979

Publisher

American Institute of Physics

Start Page

8594

End Page

8603

Journal / Book Title

Journal of Applied Physics

Volume

87

Issue

12

Copyright Statement

© 2000 American Institute of Physics.

License URL

http://www.rioxx.net/licenses/all-rights-reserved

Description

8/05/14 meb. Publisher version, OK to add.