Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40–300 nm, with a maximum aspect ratio of ˜3000. Titanium silicide contacts are fabricated on single nanowires. An aluminium top-gate, combined with a back-gate, forms a dual-gate transistor. In an n-channel
device with a nanowire diameter of ˜70 nm, the output characteristics show current saturation, with a maximum current of ˜100 nA. A drain-source threshold voltage exists for current flow,
controlled by the gate voltage, and assists in device turn-off. The ON/OFF current ratio is ˜3000, and the subthreshold swing is ˜780 mV/decade.