Anomalous de Haas-van Alphen Effect in InAs/GaSb Quantum Wells

File(s)

1610.01131v1.pdf (602.72 KB)

Accepted version

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Author(s)

Knolle, Johannes

Cooper, Nigel R

Type

Journal Article

Abstract

The de Haas–van Alphen effect describes the periodic oscillation of the magnetization in a material as a function of an inverse applied magnetic field. It forms the basis of a well established procedure for measuring Fermi surface properties, and its observation is typically taken as a direct signature of a system being metallic. However, certain insulators can show similar oscillations of the magnetization from quantization of the energies of electron states in filled bands. Recently, the theory of such an anomalous dHvAE (AdHvAE) was worked out, but there has not yet been a clear experimental observation. Here, we show that the inverted narrow gap regime of
InAs
/
GaSb
quantum wells is an ideal platform for the observation of the AdHvAE. From our microscopic calculations, we make quantitative predictions for the relevant magnetic field and temperature regimes, and we describe unambiguous experimental signatures.

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Date Issued

2017-04-26

Date Acceptance

2016-10-04

Citation

Physical Review Letters, 2017, 118 (17)

URI

http://hdl.handle.net/10044/1/54779

DOI

https://www.dx.doi.org/10.1103/PhysRevLett.118.176801

ISSN

0031-9007

Publisher

American Physical Society

Journal / Book Title

Physical Review Letters

Volume

118

Issue

17

Copyright Statement

Anomalous de Haas–van Alphen Effect in
InAs
/
GaSb
Quantum Wells

Johannes Knolle and Nigel R. Cooper
Phys. Rev. Lett. 118, 176801 – Published 26 April 2017. © 2017 American Physical Society

Subjects

Science & Technology

Physical Sciences

Physics, Multidisciplinary

Physics

METALS

STATE

Publication Status

Published

Article Number

176801