Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by randomly distributed impurities in the depletion layer

File(s)

JApplPhys_91_4326.pdf (171.09 KB)

Published version

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Author(s)

Slavcheva, G

Davies, JH

Asenov, A

Brown, AR

Type

Journal Article

Version

Published version

Date Issued

2002

Citation

Journal of Applied Physics, 2002, 91 (7), pp.4326-4334

URI

http://hdl.handle.net/10044/1/5774

URL

http://dx.doi.org/10.1063/1.1450031

ISSN

0021-8979

Publisher

American Institute of Physics

Start Page

4326

End Page

4334

Journal / Book Title

Journal of Applied Physics

Volume

91

Issue

7

Copyright Statement

© 2002 American Institute of Physics

License URL

http://www.rioxx.net/licenses/all-rights-reserved

Source Volume Number

91

Publication Status

Published