Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
File(s)
Accepted version
Author(s)
Type
Journal Article
Abstract
This paper reports the controlled growth of atomically sharp In2O3/ZnO and In2O3/Li-doped ZnO (In2O3/Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2O3/ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2O3/Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2O3/Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
Date Issued
2017-03-15
Date Acceptance
2017-03-15
Citation
Advanced Materials, 2017, 29 (19)
ISSN
0935-9648
Publisher
Wiley
Journal / Book Title
Advanced Materials
Volume
29
Issue
19
Copyright Statement
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the accepted version of the following article: D. Khim, Y.-H. Lin, S. Nam, H. Faber, K. Tetzner, R. Li, Q. Zhang, J. Li, X. Zhang, T. D. Anthopoulos, Adv. Mater. 2017, 29, 1605837., which has been published in final form at https://dx.doi.org/10.1002/adma.201605837
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000401170600011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
electron mobility
heterojunction transistors
metal oxides
modulation doping
semiconductors
solution processing
thin film transistors
THIN-FILM TRANSISTORS
FIELD-EFFECT TRANSISTORS
HIGH-PERFORMANCE
ROOM-TEMPERATURE
SOL-GEL
ELECTRON-GAS
ZINC-OXIDE
ZNO
SEMICONDUCTORS
MOBILITY
02 Physical Sciences
03 Chemical Sciences
09 Engineering
Publication Status
Published
Article Number
ARTN 1605837