Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes

File(s)

J. Labram et al._AFM_2016_DOI_10-1002-adfm-201503732.pdf (3.76 MB)

Accepted version

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Author(s)

Labram, JG

Treat, ND

Lin, Y-H

Burgess, CH

McLachlan, MA

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Type

Journal Article

Date Issued

2016-02-02

Date Acceptance

2016-02-02

Citation

Advanced Functional Materials, 2016, 26, pp.1656-1663

URI

http://hdl.handle.net/10044/1/32149

DOI

https://www.dx.doi.org/10.1002/adfm.201503732

ISSN

1616-3028

Publisher

Wiley

Start Page

1656

End Page

1663

Journal / Book Title

Advanced Functional Materials

Volume

26

Copyright Statement

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the accepted version of the following article: Labram, J. G., Treat, N. D., Lin, Y.-H., Burgess, C. H., McLachlan, M. A. and Anthopoulos, T. D. (2016), Energy Quantization in Solution-Processed Layers of Indium Oxide and Their Application in Resonant Tunneling Diodes. Adv. Funct. Mater., 26: 1656–1663, which has been published in final form at http://dx.doi.org/10.1002/adfm.201503732

Sponsor

Commission of the European Communities

Grant Number

280221

Subjects

Science & Technology

Physical Sciences

Technology

Chemistry, Multidisciplinary

Chemistry, Physical

Nanoscience & Nanotechnology

Materials Science, Multidisciplinary

Physics, Applied

Physics, Condensed Matter

Chemistry

Science & Technology - Other Topics

Materials Science

Physics

THIN-FILM TRANSISTORS

HETEROSTRUCTURES

INTERFACES

SUPERCONDUCTIVITY

MOBILITY

Materials

03 Chemical Sciences

09 Engineering

02 Physical Sciences

Publication Status

Published