Cyclic voltammetry peaks due to deep level traps in Si nanowire array electroes
File(s)
Accepted version
Author(s)
shougee, A
Konstantinou, F
Albrecht, T
Fobelets, K
Type
Journal Article
Abstract
When metal-assisted chemical etching (MACE) is used to increase the effective surface area of Si electrodes for electrochemical capacitors, it is often found that the cyclic voltammetry characteristics contain anodic and cathodic peaks. We link these peaks to the charging-discharging dynamics of deep level traps within the nanowire system. The trap levels are associated with the use of Ag in the MACE process that can leave minute amounts of Ag residue within the nanowire system to interact with the H2O layer surrounding the nanowires in a room temperature ionic liquid. The influence of the traps can be removed by shifting the Fermi level away from the trap levels via spin-on doping. These results in lower capacitance values but improved charge-discharge cycling behavior. Low-frequency noise measurements proof the presence or absence of these deep level traps.
Date Issued
2018-01-01
Date Acceptance
2017-09-16
Citation
IEEE Transactions on Nanotechnology, 2018, 17 (1), pp.154-160
ISSN
1536-125X
Publisher
Institute of Electrical and Electronics Engineers
Start Page
154
End Page
160
Journal / Book Title
IEEE Transactions on Nanotechnology
Volume
17
Issue
1
Copyright Statement
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Identifier
https://ieeexplore.ieee.org/document/8187741
Subjects
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Engineering
Science & Technology - Other Topics
Materials Science
Physics
Silicon nanowires
deep level traps
electrochemistry
supercapacitor
SILICON NANOWIRES
1/F NOISE
SEMICONDUCTOR
MICROSTRUCTURES
DEVICES
0303 Macromolecular and Materials Chemistry
0906 Electrical and Electronic Engineering
1007 Nanotechnology
Nanoscience & Nanotechnology
Publication Status
Published
Date Publish Online
2017-12-12