Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
Author(s)
Type
Journal Article
Abstract
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Date Issued
2020-07-01
Date Acceptance
2019-11-28
Citation
Infomat, 2020, 2 (4), pp.769-774
ISSN
2567-3165
Start Page
769
End Page
774
Journal / Book Title
Infomat
Volume
2
Issue
4
Copyright Statement
© 2020 The Authors. InfoMat published by John Wiley & Sons Australia, Ltd on behalf of UESTC.
This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Sponsor
Magdalene College, University of Cambridge
Royal Academy of Engineering
Royal Academy Of Engineering
Identifier
https://onlinelibrary.wiley.com/doi/full/10.1002/inf2.12076
Grant Number
RF\201718\17101
RF\201718\17101
Publication Status
Published
Article Number
inf2.12076
Date Publish Online
2020-01-17