Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing
File(s)1811.01867v2.pdf (1.75 MB)
Accepted version
Author(s)
Park, Ji-Sang
Kim, Sunghyun
Hood, Samantha N
Walsh, Aron
Type
Journal Article
Abstract
There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the opencircuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole
recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows
electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnSe4/CdS interface,
consistent with a lower open-circuit voltage deficit.
recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows
electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnSe4/CdS interface,
consistent with a lower open-circuit voltage deficit.
Date Issued
2018-11-20
Date Acceptance
2018-11-05
Citation
Applied Physics Letters, 2018, 113 (21)
ISSN
1077-3118
Publisher
AIP Publishing
Journal / Book Title
Applied Physics Letters
Volume
113
Issue
21
Copyright Statement
© 2018 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 113, 212103 (2018); https://doi.org/10.1063/1.5063793 and may be found at https://doi.org/10.1063/1.5063793.
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000450896600009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Physical Sciences
Physics, Applied
Physics
GENERALIZED GRADIENT APPROXIMATION
EFFICIENCY
RECOMBINATION
ALIGNMENT
SE
Publication Status
Published
Article Number
212103
Date Publish Online
2018-11-20