Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics
File(s)
Author(s)
Wijeyasinghe, N
Anthopoulos, TD
Type
Journal Article
Abstract
Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including transparent thin-film transistors, high-efficiency organic and hybrid organic-inorganic photovoltaic cells, and organic light-emitting diodes. CuSCN combines
intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum.
Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits
of using CuSCN in numerous emerging applications as an alternative to conventional holetransport materials are also discussed.
intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum.
Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits
of using CuSCN in numerous emerging applications as an alternative to conventional holetransport materials are also discussed.
Date Issued
2015-08-24
Date Acceptance
2015-07-01
Citation
Semiconductor Science and Technology, 2015, 30 (10)
ISSN
1361-6641
Publisher
IOP Publishing
Journal / Book Title
Semiconductor Science and Technology
Volume
30
Issue
10
Copyright Statement
© 2015 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at http://iopscience.iop.org/article/10.1088/0268-1242/30/10/104002
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000362602300004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Condensed Matter
Engineering
Materials Science
Physics
Copper thiocyanate
Hole transport
Transparent semiconductor
Solar cells
OLEDs
Transistors
Hole mobility
Applied Physics
Condensed Matter Physics
Materials Engineering
Publication Status
Published
Article Number
ARTN 104002