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  5. Twist-angle sensitivity of electron correlations in moiré graphene bilayers
 
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Twist-angle sensitivity of electron correlations in moiré graphene bilayers
File(s)
paper-tbg.pdf (2.96 MB)
Accepted version
zg_twistangle_SI.pdf (2.21 MB)
Supporting information
Author(s)
Goodwin, Zachary AH
Corsetti, Fabiano
Mostofi, Arash A
Lischner, Johannes
Type
Journal Article
Abstract
Motivated by the recent observation of correlated insulator states and unconventional superconductivity in twisted bilayer graphene, we study the dependence of electron correlations on the twist angle and reveal the existence of strong correlations over a narrow range of twist angles near the magic angle. Specifically, we determine the on-site and extended Hubbard parameters of the low-energy Wannier states using an atomistic quantum-mechanical approach. The ratio of the on-site Hubbard parameter and the width of the flat bands, which is an indicator of the strength of electron correlations, depends sensitively on the screening by the semiconducting substrate and the metallic gates. Including the effect of long-ranged Coulomb interactions significantly reduces electron correlations and explains the experimentally observed sensitivity of strong-correlation phenomena on twist angles.
Date Issued
2019-09-13
Date Acceptance
2019-09-13
Citation
Physical Review B, 2019, 100 (12)
URI
http://hdl.handle.net/10044/1/73638
DOI
https://www.dx.doi.org/10.1103/physrevb.100.121106
ISSN
2469-9950
Publisher
American Physical Society (APS)
Journal / Book Title
Physical Review B
Volume
100
Issue
12
Copyright Statement
©2019 American Physical Society
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Engineering and Physical Sciences Research Council
Grant Number
EP/S025324/1
EP/L015579/1
Publication Status
Published
Article Number
121106
Date Publish Online
2019-09-13
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