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Role of charge traps in the performance of atomically-thin transistors
File(s)
Author(s)
Amit, I
Octon, TJ
Townsend, NJ
Reale, F
Wright, CD
Type
Journal Article
Abstract
Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.
Date Issued
2017-03-15
Date Acceptance
2017-02-06
Citation
Advanced Materials, 2017, 29 (19)
URI
DOI
ISSN
1521-4095
Publisher
Wiley
Journal / Book Title
Advanced Materials
Volume
29
Issue
19
Copyright Statement
© 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Grant Number
EP/L003481/1
Subjects
Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
2D materials
current transients
field-effect transistors
MoTe2
surface states
FIELD-EFFECT TRANSISTORS
TRANSITION-METAL DICHALCOGENIDES
TRANSIENT SPECTROSCOPY
MOS2
GRAPHENE
SEMICONDUCTORS
TRANSPARENT
ELECTRONICS
MOTE2
NOISE
cond-mat.mes-hall
cond-mat.mtrl-sci
02 Physical Sciences
03 Chemical Sciences
09 Engineering
Publication Status
Published
Article Number
1605598