14 GHz schottky diodes using a p-doped organic polymer.
Author(s)
Type
Journal Article
Abstract
The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C16 IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C16 IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C16 IDT-BT with the molecular p-dopant C60 F48 , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.
Date Issued
2022-01-06
Date Acceptance
2021-12-01
Citation
Advanced Materials, 2022, 34 (22), pp.1-8
ISSN
0935-9648
Publisher
Wiley
Start Page
1
End Page
8
Journal / Book Title
Advanced Materials
Volume
34
Issue
22
Copyright Statement
© 2022 Wiley-VCH GmbH. This is the accepted version of the following article: Loganathan, K., Scaccabarozzi, A. D., Faber, H., Ferrari, F., Bizak, Z., Yengel, E., Naphade, D. R., Gedda, M., He, Q., Solomeshch, O., Adilbekova, B., Yarali, E., Tsetseris, L., Salama, K. N., Heeney, M., Tessler, N., Anthopoulos, T. D., 14 GHz Schottky Diodes Using a p-Doped Organic Polymer. Adv. Mater. 2022, 34, which has been published in final form at https://doi.org/10.1002/adma.202108524
Identifier
https://www.ncbi.nlm.nih.gov/pubmed/34990058
Subjects
Organic semiconductor
Schottky diodes
printed electronics
radio frequency electronics
rectifier circuits
Publication Status
Published
Coverage Spatial
Germany
Date Publish Online
2022-01-06