Thin‐Film Transistors for Large Area Opto/Electronics
Author(s)
Wobkenberg, Paul Henrich
Type
Thesis
Abstract
The present work addresses several issues in the field of organic and transparent
electronics. One of them is the prevailing high power consumption in state-of-the-art
organic field-effect transistors (OFETs). A possible solution could be the
implementation of complementary, rather than unipolar logic, but this development is
currently inhibited by a distinct lack of high performance electron transporting (n-channel)
OFETs. Here, the issue is addressed by investigating a series of solution
processable n-channel fullerene molecules in combination with optimized transistor
architectures. Furthermore, the trend towards complementary circuit design could be
facilitated by employing ambipolar organic semiconductors, such as squaraine
molecules or polymer/fullerene blends. These materials can fill the role of p- or n-channel
semiconductors and enable the facile implementation of power saving
complementary-like logic, eliminating the cost-intensive patterned deposition of
discrete p-and n-channel transistors. Alternatively, a patterning method for organic
materials adapted from standard photolithography is discussed. Furthermore,
ambipolar FETs are found to be capable of light sensing at wavelength of 400-1000
nm. Hence their use in low-cost, organic based optical sensor arrays can be envisioned.
Another strategy to reduce the power consumption and operating voltages of
OFETs is the use of ultra-thin, self-assembled molecular gate dielectrics, such as
alkyl-phosphonic acid molecules. Based on this approach solution processed n- and p-channel
OFETs and a complementary organic inverter circuit are demonstrated, which
operate at less than 2 Volts.
Finally, transparent oxide semiconductors are investigated for use in thin-film
transistors. Titanium dioxide (TiO2) and zinc oxide (ZnO) films are deposited by
means of a low-cost large area compatible spray pyrolysis technique. ZnO transistors
exhibit high electron mobility of the order of 10 cm2/Vs and stable operation in air at
less than 2 Volts. These results are considered significant steps towards the
development of organic and transparent large-area optoelectronics.
electronics. One of them is the prevailing high power consumption in state-of-the-art
organic field-effect transistors (OFETs). A possible solution could be the
implementation of complementary, rather than unipolar logic, but this development is
currently inhibited by a distinct lack of high performance electron transporting (n-channel)
OFETs. Here, the issue is addressed by investigating a series of solution
processable n-channel fullerene molecules in combination with optimized transistor
architectures. Furthermore, the trend towards complementary circuit design could be
facilitated by employing ambipolar organic semiconductors, such as squaraine
molecules or polymer/fullerene blends. These materials can fill the role of p- or n-channel
semiconductors and enable the facile implementation of power saving
complementary-like logic, eliminating the cost-intensive patterned deposition of
discrete p-and n-channel transistors. Alternatively, a patterning method for organic
materials adapted from standard photolithography is discussed. Furthermore,
ambipolar FETs are found to be capable of light sensing at wavelength of 400-1000
nm. Hence their use in low-cost, organic based optical sensor arrays can be envisioned.
Another strategy to reduce the power consumption and operating voltages of
OFETs is the use of ultra-thin, self-assembled molecular gate dielectrics, such as
alkyl-phosphonic acid molecules. Based on this approach solution processed n- and p-channel
OFETs and a complementary organic inverter circuit are demonstrated, which
operate at less than 2 Volts.
Finally, transparent oxide semiconductors are investigated for use in thin-film
transistors. Titanium dioxide (TiO2) and zinc oxide (ZnO) films are deposited by
means of a low-cost large area compatible spray pyrolysis technique. ZnO transistors
exhibit high electron mobility of the order of 10 cm2/Vs and stable operation in air at
less than 2 Volts. These results are considered significant steps towards the
development of organic and transparent large-area optoelectronics.
Date Issued
2009
Date Awarded
2009-12
Copyright Statement
Attribution NoDerivatives 4.0 International Licence (CC BY-ND)
Advisor
Anthopoulos, Thomas
Bradley, Donal
Sponsor
Engineering and Physical Sciences Research Council
Creator
Wobkenberg, Paul Henrich
Grant Number
EP/C539524/1
Publisher Department
Physics
Publisher Institution
Imperial College London
Qualification Level
Doctoral
Qualification Name
Doctor of Philosophy (PhD)