Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst
File(s)
Published version
Author(s)
Type
Journal Article
Abstract
Tin disulfide is attractive as a potential visible-light photocatalyst because its elemental components are cheap, abundant and environmentally benign. As a 2-dimensional semiconductor, SnS2 can undergo exfoliation to form atomic layer sheets that provide high surface areas of photoactive material. In order to facilitate the deployment of this exciting material in industrial processes and electrolytic cells, single crystals of phase pure SnS2 are synthesised and analysed with modern spectroscopic techniques to ascertain the values of relevant semiconductor properties. An electron affinity of 4.16 eV, ionisation potential of 6.44 eV and work function of 4.81 eV are found. The temperature dependent band gap is also reported for this material for the first time. We confirm the valence band is formed predominately by a mixture S 3p and Sn 5s, while the conduction band consists of a mixture of Sn 5s and 5p orbitals and comment on the agreement between experiment and theory for values of band gaps.
Date Issued
2015-12-11
Date Acceptance
2015-12-09
Citation
Journal of Materials Chemistry A, 2015, 4 (4), pp.1312-1318
ISSN
2050-7496
Publisher
Royal Society of Chemistry
Start Page
1312
End Page
1318
Journal / Book Title
Journal of Materials Chemistry A
Volume
4
Issue
4
Copyright Statement
This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
License URL
Subjects
Science & Technology
Physical Sciences
Technology
Chemistry, Physical
Energy & Fuels
Materials Science, Multidisciplinary
Chemistry
Materials Science
TEMPERATURE-DEPENDENCE
RAMAN-SCATTERING
THIN-FILMS
CELLS
WATER
DEPOSITION
POLYTYPISM
SN2S3
GAP
Publication Status
Published