We investigate the electric field dependence of hopping conduction in 300 nm thick films of ˜8 nm
diameter silicon nanocrystals. The hopping conductivity σ follows a lnσ proportional to 1/T^1/2 dependence with temperature T, explained by a percolation hopping conduction model. At high fields F ˜ 10^5 V/cm, the hopping conductivity follows a lnσ proportional to F^1/2 dependence. This dependence is investigated using the concept of “effective temperature,” introduced originally by Shklovskii for hopping conduction in disordered materials.