Si nanocrystals and nanochains, prepared by material synthesis, provide a means to define nanoscale devices using growth rather than lithographic techniques. Electronic transport in thin films of Si nanocrystals is influenced strongly by single-electron charging and quantum-confinement effects, and by the grain boundary regions between nanocrystals. This paper reviews electronic transport mechanisms in Si nanocrystal materials. These include thermionic emission of electrons across grain boundaries, space charge limited current, hopping transport, and single-electron charging effects. The fabrication of single electron devices in Si nanocrystal thin films and nanochains is considered, particularly with regards to their operation at room temperature.