Dark-field optical fault inspection of ∼10 nm scale room-temperature silicon single-electron transistors
File(s)
Published version
Author(s)
He, Wenkun
Chu, Kai-Lin
Abualnaja, Faris
Jones, Mervyn
Durrani, Zahid
Type
Journal Article
Abstract
Dark-field (DF) optical microscopy, combined with optical simulation based on modal diffraction theory for transverse electric polarized white light, is shown to provide non-invasive, sub-wavelength geometrical information for nanoscale etched device structures. Room temperature (RT) single electron transistors (SETs) in silicon, defined using etched ∼10 nm point-contacts (PCs) and in-plane side gates, are investigated to enable fabrication fault detection. Devices are inspected using scanning electron microscopy, bright-field (BF) and DF imaging. Compared to BF, DF imaging enhances contrast from edge diffraction by ×3.5. Sub-wavelength features in the RT SET structure lead to diffraction peaks in the DF intensity patterns, creating signatures for device geometry. These features are investigated using a DF line scan optical simulation approximation of the experimental results. Dark field imaging and simulation are applied to three types of structures, comprising successfully-fabricated, over-etched and interconnected PC/gate devices. Each structure can be identified via DF signatures, providing a non-invasive fault detection method to investigate etched nanodevice morphology.
Date Issued
2023-12-10
Date Acceptance
2023-09-18
Citation
Nanotechnology, 2023, 34 (50)
ISSN
0957-4484
Publisher
IOP Publishing
Journal / Book Title
Nanotechnology
Volume
34
Issue
50
Copyright Statement
© 2023 The Author(s). Published by IOP Publishing Ltd Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
License URL
Identifier
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:001080768400001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
Subjects
AFM
COUPLED-WAVE ANALYSIS
dark field optical microscopy
DIFFRACTION
GATE
Materials Science
Materials Science, Multidisciplinary
MEMORY
modal diffraction theory simulation
Nanoscience & Nanotechnology
optical microscopy
OXIDE
Physical Sciences
Physics
Physics, Applied
room temperature single electron transistors
Science & Technology
Science & Technology - Other Topics
SEM
semiconductor device inspection
Technology
TIP
WEAR
Publication Status
Published
Coverage Spatial
England
Article Number
505302
Date Publish Online
2023-10-09