Reduced drift of CMOS ISFET pH sensors using graphene sheets
File(s)
Accepted version
Author(s)
Panteli, Christoforos
Georgiou, Pantelis
Fobelets, Kristel
Type
Journal Article
Abstract
Reduction of drift in Complementary Metal Oxide-Semiconductor (CMOS) Ion-Sensitive Field-Effect Transistor (ISFET) pH sensors is demonstrated using monolayer and multilayer graphene sheets. Graphene blocks the ion penetration in the CMOS passivation layers and provides the physisorption sites needed for electrical double layer formation allowing sensing. With an in-house polymer-assisted graphene transfer (PAGT) process, monolayer and multilayer graphene sheets were manually transferred on top of the sensing membrane of CMOS ISFET sensors on a 2 by 4 mm chip. Experiments with pH buffers on five different chips were performed to extract the average performance parameters of capacitive attenuation, trapped charge, sensitivity, drift and noise. The stretched exponential function, that describes dispersion processes in amorphous solids such as silicon dioxide and silicon nitride, was modified to model the dynamic drift behaviour and analyse the effect of graphene on the performance of the sensors. The results show that on average the graphene coated ISFET sensors experience about 50% reduction in drift amplitude, up to 3 times slower surface modification and perform overall better compared to the plain unmodified devices.
Date Issued
2021-07-01
Date Acceptance
2021-04-17
Citation
IEEE Sensors Journal, 2021, 21 (13)
ISSN
1530-437X
Publisher
Institute of Electrical and Electronics Engineers
Journal / Book Title
IEEE Sensors Journal
Volume
21
Issue
13
Copyright Statement
Copyright © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Identifier
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000668948200066&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
Subjects
Biomedical pH sensing
Capacitance
CMOS
DIAGNOSTICS
Electrolytes
Engineering
Engineering, Electrical & Electronic
FIELD-EFFECT TRANSISTORS
graphene
Graphene
Instruments & Instrumentation
ISFET
Logic gates
Passivation
PERFORMANCE
PHYSICAL MODEL
Physical Sciences
Physics
Physics, Applied
RELAXATION
Science & Technology
Sensors
Silicon
Technology
TRAPPED CHARGE
Publication Status
Published
Date Publish Online
2021-04-23