We report the fabrication of polymer field effect transistors operating under a bias of |1V| in
which the insulator and semiconductor are gravure printed on plastic at the high speed of 0.7
m s-1. Remarkably, the process does not necessitate any surface modification and relies solely
on the careful selection and optimization of formulations based on solvent blends. In addition
to demonstrating high-throughput fabrication, we fulfill another requirement for organic
electronics and achieve low-voltage operation in ambient air by using a polyelectrolyte
insulator, poly(4-styrenesulfonic acid) (PSSH). PSSH is a proton conductor that forms
electrical double layers at the interfaces with the gate electrode and the semiconductor
channel upon application of a small gate voltage (≤ |1 V|). Printed PSSH exhibits a high
capacitance of 10 μF cm-2, leading to a printed poly(3-hexylthiophene) (P3HT) hole mobility
above 0.1 cm2 V-1 s-1 in a bottom-gate, top-contact configuration.